Background
Type: Article

Molecular dynamics simulation of gas adsorption on defected graphene

Journal: Molecular Physics (00268976)Year: 1 December 2013Volume: 111Issue: Pages: 3726 - 3732
Kharatha M.Vaez A.a Hasan Rozatian A.S.
DOI:10.1080/00268976.2013.785609Language: English

Abstract

Gas sensing is one of the most promising applications for graphene. Using molecular dynamics simulation method, adsorption isotherm of xenon (Xe) gas on defected and perfect graphene is studied in order to investigate sensing properties of graphene for Xe gas. In this method, first generation of Brenner many-body potential is used to simulate the interaction of carbon-carbon (C) atoms in graphene, and Lennard-Jones two-body potential is used to simulate interaction of Xe-Xe and Xe-C atoms. In the simulated systems, adsorption coverage, radial distribution function, heat of adsorption, binding energy and specific heat capacity at constant volume are calculated for several temperatures between 90 K and 130 K, and various pressures. It was found that both of the defected and perfect graphene could be introduced as very good candidates for adsorption of Xe gas. © 2013 Taylor and Francis Group, LLC.


Author Keywords

adsorptiongas sensorgraphenemolecular dynamicsStone-Wales defect

Other Keywords

AdsorptionBinding energyChemical sensorsGas adsorptionGas detectorsGrapheneMolecular dynamicsPoint defectsSpecific heatConstant volumesDefected grapheneHeat of adsorptionMany-body potentialsMolecular dynamics simulation methodsMolecular dynamics simulationsRadial distribution functionsStone-Wales defectsXenon