An energy-efficient full adder cell using CNFET technology

Abstract

The reduction in the gate length of the current devices to 65 nm causes their I-V characteristics to depart from the traditional MOS-FETs. As a result, manufacturing of new efficient devices in nanoscale is inevitable. The fundamental properties of the metallic and semi-conducting carbon Nanotubes (CNTs) make them alternatives to the conventional silicon-based devices. In this paper an ultra high-speed and energy-efficient full adder is proposed, using Carbon Nanotube Field Effect Transistor (CN-FET) in nanoscale. Extensive simulation results using HSPICE are reported to show that the proposed adder consumes lower power, and is faster compared to the previous adders. © 2012 The Institute of Electronics, Information and Communication Engineers.